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- Haglund, Erik, 1985, et al.
(författare)
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850 nm datacom VCSELs for higher-speed and longer-reach transmission
- 2013
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Ingår i: European VCSEL Day 2013.
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Konferensbidrag (refereegranskat)abstract
- The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
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| 2. |
- Haglund, Erik, 1985, et al.
(författare)
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Quasi-single mode VCSELs for longer-reach multimode fiber optical interconnects
- 2014
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Ingår i: Summers School on Optical Interconnects, 3-6 June 2014, Thessaloniki.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Longer-reach (>300 m) optical interconnects are needed asdatacenters grow ever larger. Today the reach of 850 nmVCSEL-based optical interconnects is mainly limited by fiber dispersion. By reducing the spectral width of the VCSEL, the effects of fiber dispersion may be reduced, effectively increasing the error-free transmission distance.
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| 3. |
- Kumari, Sulakshna, et al.
(författare)
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Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
- 2015
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781628414622 ; 9372, s. Art. no. 93720U-
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Konferensbidrag (refereegranskat)abstract
- We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (
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